검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD Jang SH, Lee CR Journal of Crystal Growth, 253(1-4), 64, 2003 |
| 2 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure Yeh LS, Lee ML, Sheu JK, Chen MG, Kao CJ, Chi GC, Chang SJ, Su YK Solid-State Electronics, 47(5), 873, 2003 |