화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Growth and characterization of quaternary AlInGaN multiple quantum wells with different aluminum composition
Liu T, Jiao SJ, Wang DB, Zhao LC, Yang TP, Xiao ZG
Applied Surface Science, 301, 178, 2014
2 Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison
Ahl JP, Hertkorn J, Koch H, Galler B, Michel B, Binder M, Hollander B
Journal of Crystal Growth, 398, 33, 2014
3 Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition
Ryu MY, Chen CQ, Kim JS, Khan MA
Current Applied Physics, 11(2), 231, 2011
4 Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
Fu YK, Lu YH, Jiang RH, Chen BC, Fang YH, Xuan R, Su YK, Lin CF, Chen JF
Solid-State Electronics, 62(1), 142, 2011
5 Growth of quaternary AlInGaN with various TMI molar rates
Yu SF, Chang SJ, Lin RM, Lin YH, Lu YC, Chang SP, Chiou YZ
Journal of Crystal Growth, 312(12-13), 1920, 2010
6 AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact
Lee HC, Su YK, Lin JC, Cheng YC, Li TC, Chang KJ
Solid-State Electronics, 54(4), 488, 2010
7 Growth behavior of AlInGaN films
Shang JZ, Zhang BP, Mao MH, Cai LE, Zhang JY, Fang ZL, Liu BL, Yu JZ, Wang QM, Kusakabe K, Ohkawa K
Journal of Crystal Growth, 311(3), 474, 2009
8 Luminescence studies on nitride quaternary alloys double quantum wells
Rodrigues SCP, dos Santos OFP, Scolfaro LMR, Sipahi GM, da Silva EF
Applied Surface Science, 254(23), 7790, 2008
9 High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates
Shang JZ, Zhang BP, Wu CM, Cai LE, Zhang JY, Yu JZ, Wang QM
Applied Surface Science, 255(5), 3350, 2008
10 Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD
Yu TJ, Pan YB, Yang ZJ, Xu K, Zhang GY
Journal of Crystal Growth, 298, 211, 2007