검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer Ke WC, Liang ZY, Tesfay ST, Chiang CY, Yang CY, Chang KJ, Lin JC Applied Surface Science, 494, 644, 2019 |
| 2 |
Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism Sahoo AK, Subramani NK, Nallatamby JC, Sylvain L, Loyez C, Quere R, Medjdoub F Solid-State Electronics, 115, 12, 2016 |
| 3 |
High PAE high reliability AlN/GaN double heterostructure Medjdoub F, Zegaoui M, Linge A, Grimbert B, Silvestri R, Meneghini M, Meneghesso G, Zanoni E Solid-State Electronics, 113, 49, 2015 |
| 4 |
Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices Mohanbabu A, Anbuselvan N, Mohankumar N, Godwinraj D, Sarkar CK Solid-State Electronics, 91, 44, 2014 |
| 5 |
Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures Arslan E, Turhan S, Gokden S, Teke A, Ozbay E Thin Solid Films, 548, 411, 2013 |
| 6 |
Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Deen DA, Storm DF, Katzer DS, Meyer DJ, Binari SC Solid-State Electronics, 54(6), 613, 2010 |
| 7 |
Ultraviolet spectroscopy of Pr+3 and its use in making ultraviolet filters Maqbool M, Ahmad I Current Applied Physics, 9(1), 234, 2009 |
| 8 |
Growth and characterization of c-plane AlGaN on gamma-LiAlO2 Tun CJ, Kuo CH, Fu YK, Kuo CW, Chou MMC, Chi GC Journal of Crystal Growth, 311(14), 3726, 2009 |
| 9 |
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG Solid-State Electronics, 53(3), 332, 2009 |
| 10 |
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz Wang XL, Chen TS, Xiao HL, Wang CM, Hu GX, Luo WJ, Tang J, Guo LC, Li JM Solid-State Electronics, 52(6), 926, 2008 |