검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
The influence of V/III ratio on GaN grown on patterned sapphire substrate with low temperature AlN buffer layer by hydride vapor phase epitaxy Liu NL, Wang Q, Zheng XP, Li SF, Dikme Y, Xiong H, Pang YZ, Zhang GY Journal of Crystal Growth, 500, 85, 2018 |
| 2 |
Surface Analysis of Plasma Pretreated Sapphire Substrate for Aluminum Nitride Buffer Layer Jeong WS, Kim DS, Cho SH, Kim C, Jhin JG, Byun DJ Korean Journal of Materials Research, 27(12), 699, 2017 |
| 3 |
PSS 상 버퍼층 종류에 따른 GaN 박막 성장 특성 비교 이창민, 강병훈, 김대식, 변동진 Korean Journal of Materials Research, 24(12), 645, 2014 |
| 4 |
Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure Komatsu N, Satoh T, Honjo M, Futatuki T, Masumoto K, Kimura C, Aoki H Applied Surface Science, 257(20), 8307, 2011 |
| 5 |
Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition Kuo CW, Fu YK, Kuo CH, Chang LC, Tun CJ, Pan CJ, Chi GC Journal of Crystal Growth, 311(2), 249, 2009 |
| 6 |
The effect of AlN buffer layer on properties of AlxIn1-xN films on glass substates Yeh TS, Wu JM, Lan WH Thin Solid Films, 517(11), 3204, 2009 |
| 7 |
Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification Okada N, Kato N, Sato S, Sumii T, Nagai T, Fujimoto N, Imura M, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Maruyama H, Takagi T, Noro T, Bandoh A Journal of Crystal Growth, 298, 349, 2007 |
| 8 |
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer Zhao DG, Jiang DS, Zhu JJ, Liu ZS, Zhang SM, Yang H, Liang JW Journal of Crystal Growth, 303(2), 414, 2007 |
| 9 |
High resolution X-ray diffraction of GaN grown on Si (111) by MOVPE Chaaben N, Boufaden T, Fouzri A, Bergaoui MS, El Jani B Applied Surface Science, 253(1), 241, 2006 |
| 10 |
V-shaped pits formed at the GaN/AlN interface Bai J, Wang T, Parbrook PJ, Ross IM, Cullis AG Journal of Crystal Growth, 289(1), 63, 2006 |