검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Diffusion barrier properties of atomic layer deposited ultrathin Ta2O5 and TiO2 films Alen P, Vehkamaki M, Ritala M, Leskela M Journal of the Electrochemical Society, 153(4), G304, 2006 |
| 2 |
Atomic layer deposition of molybdenum nitride thin films for Cu metallizations Alen P, Ritala M, Arstila K, Keinonen J, Leskela M Journal of the Electrochemical Society, 152(5), G361, 2005 |
| 3 |
The growth and diffusion barrier properties of atomic layer deposited NbNx thin films Alen P, Ritala M, Arstila K, Keinonen J, Leskela M Thin Solid Films, 491(1-2), 235, 2005 |
| 4 |
ALD of Ta(Si)N thin films using TDMAS as a reducing agent and as a Si precursor Alen P, Aaltonen T, Ritala M, Leskela M, Sajavaara T, Keinonen J, Hooker JC, Maes JW Journal of the Electrochemical Society, 151(8), G523, 2004 |
| 5 |
Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources Juppo M, Alen P, Ritala M, Sajavaara T, Keinonen J, Leskela M Electrochemical and Solid State Letters, 5(1), C4, 2002 |
| 6 |
Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent Alen P, Juppo M, Ritala M, Sajavaara T, Keinonen J, Leskela M Journal of the Electrochemical Society, 148(10), G566, 2001 |