검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Demonstration of planar thick InP layers by selective MOVPE Dupuis N, Decobert J, Lagree PY, Lagay N, Carpentier D, Alexandre F Journal of Crystal Growth, 310(23), 4795, 2008 |
| 2 |
Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 mu m laser emission Gouardes E, Alexandre F, Gauthier-Lafaye O, Vuong-Becaert A, Colson V, Thedrez B Journal of Crystal Growth, 248, 446, 2003 |
| 3 |
Growth and characterization of high quality BxGa1-xAs/GaAs(001) epilayers Dumont H, Dazord J, Monteil Y, Alexandre F, Goldstein L Journal of Crystal Growth, 248, 463, 2003 |
| 4 |
(NH4)(2)S-X Preepitaxial Treatment for GaAs Chemical Beam Epitaxy Regrowth Sik H, Driad R, Legay P, Juhel M, Harmand JC, Launay P, Alexandre F Journal of Vacuum Science & Technology B, 14(1), 147, 1996 |
| 5 |
High-Stability Heterojunction Bipolar-Transistors with Carbon-Doped Base Grown by Atomic Layer Chemical Beam Epitaxy Driad R, Alexandre F, Juhel M, Launay P Journal of Vacuum Science & Technology B, 14(6), 3509, 1996 |