| 1 |
High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy
Li LK, Alperin J, Wang WI, Look DC, Reynolds DC
Journal of Vacuum Science & Technology B, 16(3), 1275, 1998 |
| 2 |
AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy
Jurkovic MJ, Alperin J, Du Q, Wang WI, Chang MF
Journal of Vacuum Science & Technology B, 16(3), 1401, 1998 |
| 3 |
In situ relaxed Si1-xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates
Yang Z, Alperin J, Wang WI, Iyer SS, Kuan TS, Semendy F
Journal of Vacuum Science & Technology B, 16(3), 1489, 1998 |
| 4 |
Nitrogen-Vacancy as the Donor - Experimental-Evidence in the Ammonia-Assisted Molecular-Beam Epitaxy of GaN
Yang Z, Li LK, Alperin J, Wang WI
Journal of the Electrochemical Society, 144(10), 3474, 1997 |
| 5 |
Normal Incidence Infrared Modulators Using Intersubband Transitions in InAs/GaSb/AlSb Stepped Quantum-Wells Grown by Molecular-Beam Epitaxy
Du Q, Alperin J, Wang WI
Journal of Vacuum Science & Technology B, 14(3), 2343, 1996 |
