검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation Alterovitz SA, Mueller CH, Croke ET Journal of Vacuum Science & Technology B, 22(4), 1776, 2004 |
| 2 |
Interface characterization of Si3N4/Si/GaAs heterostructures after high temperature annealing Park DG, Wang ZH, Morkoc H, Alterovitz SA, Smith DJ, Tsen SCY Journal of Vacuum Science & Technology B, 16(6), 3032, 1998 |
| 3 |
Multiple minima in the ellipsometric error function Alterovitz SA, Johs B Thin Solid Films, 313-314, 124, 1998 |
| 4 |
Gate Quality Si3N4 Prepared by Low-Temperature Remote Plasma-Enhanced Chemical-Vapor-Deposition for III-V Semiconductor-Based Metal-Insulator-Semiconductor Devices Park DG, Tao M, Li D, Botchkarev AE, Fan Z, Wang Z, Mohammad SN, Rockett A, Abelson JR, Morkoc H, Heyd AR, Alterovitz SA Journal of Vacuum Science & Technology B, 14(4), 2674, 1996 |
| 5 |
Applications of Variable-Angle Spectroscopic Ellipsometry to Strained SiGe Alloy Heterostructures Heyd AR, Alterovitz SA, Croke ET, Wang KL, Lee CH Thin Solid Films, 270(1-2), 91, 1995 |
| 6 |
Plasma-Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field-Effect Transistors on Semiinsulating InP Tabory CN, Young PG, Smith ED, Alterovitz SA Journal of Vacuum Science & Technology B, 12(1), 130, 1994 |