| 1 |
Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
Wang WC, Tsai MC, Lin YP, Tsai YJ, Lin HC, Chen MJ
Materials Chemistry and Physics, 184, 291, 2016 |
| 2 |
Synthesis and consolidation behavior of Al/AIN composite powders by reactive RF thermal plasma spraying
Cho SC, Han C, Choi H, Kim HS, Jin S, Han JH
Powder Technology, 287, 395, 2016 |
| 3 |
Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study
Kim YH, Lee JH, Noh YK, Oh JE, Ahn SJ
Thin Solid Films, 576, 61, 2015 |
| 4 |
Effect of First-Stage Growth Manipulation and Polarity of SiC Substrates on AlN Epilayers Grown Using Plasma-Assisted Molecular Beam Epitaxy
Le DD, Kim DY, Hong SK
Korean Journal of Materials Research, 24(5), 266, 2014 |
| 5 |
Thickness dependent residual stress in sputtered AlN thin films
Pobedinskas P, Bolsee JC, Dexters W, Ruttens B, Mortet V, D'Haen J, Manca JV, Haenen K
Thin Solid Films, 522, 180, 2012 |
| 6 |
Dependence of N-2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature
Shukla G, Khare A
Applied Surface Science, 255(5), 2057, 2008 |
| 7 |
High thermal conductivity epoxy molding compound filled with a combustion synthesized AIN powder
Hsieh CY, Chung SL
Journal of Applied Polymer Science, 102(5), 4734, 2006 |
