검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
High germanium doping of GaN films by ammonia molecular beam epitaxy Fireman MN, L'Heureux G, Wu F, Mates T, Young EC, Speck JS Journal of Crystal Growth, 508, 19, 2019 |
| 2 |
AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range Tamariz S, Martin D, Grandjean N Journal of Crystal Growth, 476, 58, 2017 |