| 1 |
스퍼터링 공정 압력이 InZnO 박막트랜지스터의 광학 및 전기적 특성에 미치는 영향
박지민, 김형도, 장성철, 김현석
Korean Journal of Materials Research, 30(4), 211, 2020 |
| 2 |
Preparation of transparent amorphous ZnSnO3 cubic nanoparticles and light-induced homostructures: Application in UV sensor and room-temperature gas sensor
Wang XY, Xia MZ, Li H, Zhu XT, Leng BX, Tao T, Xu W, Xu JT
Applied Surface Science, 493, 862, 2019 |
| 3 |
Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
Lee BH, Lee DY, Lee JY, Park S, Kim S, Lee SY
Solid-State Electronics, 158, 59, 2019 |
| 4 |
Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method
Lee BH, Han S, Lee SY
Solid-State Electronics, 139, 15, 2018 |
| 5 |
Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios
Kim JH, Park EK, Kim MS, Cho HJ, Lee DH, Kim JH, Khang Y, Park K, Kim YS
Thin Solid Films, 645, 154, 2018 |
| 6 |
Sputtered boron indium oxide thin-film transistors
Stewart KA, Gouliouk V, Keszler DA, Wager JF
Solid-State Electronics, 137, 80, 2017 |
| 7 |
Effects of vacuum annealing on carrier transport properties of band gap-tunable semiconducting amorphous Cd-Ga-O thin films
Sato C, Kimura Y, Yanagi H
Thin Solid Films, 624, 29, 2017 |
| 8 |
Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers
Xie HT, Wu Q, Xu L, Zhang L, Liu GC, Dong CY
Applied Surface Science, 387, 237, 2016 |
| 9 |
Effects of thermal annealing on elimination of deep defects in amorphous In-Ga-Zn-O thin-film transistors
Tang HC, Ide K, Hiramatsu H, Ueda S, Ohashi N, Kumomi H, Hosono H, Kamiya T
Thin Solid Films, 614, 73, 2016 |
| 10 |
Ultrawide band gap amorphous oxide semiconductor, Ga-Zn-O
Kim J, Miyokawa N, Sekiya T, Ide K, Toda Y, Hiramatsu H, Hosono H, Kamiya T
Thin Solid Films, 614, 84, 2016 |
