화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy
Li T, Staddon CR, Novikov SV, Fewster PF, Widdowson A, Andrew NL, Kidd P, Harrison I, Winser A, Liao Y, Foxon CT
Journal of Crystal Growth, 235(1-4), 103, 2002
2 Microstructure and composition analysis of group III nitrides by X-ray scattering
Fewster PF, Andrew NL, Foxon CT
Journal of Crystal Growth, 230(3-4), 398, 2001
3 X-ray studies of group III-nitride quantum wells with high quality interfaces
Fewster PF, Andrew NL, Hughes OH, Staddon C, Foxon CT, Bell A, Cheng TS, Wang T, Sakai S, Jacobs K, Moerman I
Journal of Vacuum Science & Technology B, 18(4), 2300, 2000
4 Strain analysis by X-ray diffraction
Fewster PF, Andrew NL
Thin Solid Films, 319(1-2), 1, 1998