화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
Alaskar Y, Arafin S, Lin QY, Wickramaratne D, Mckay J, Norman AG, Zhang Z, Yao LC, Ding F, Zou J, Goorsky MS, Lake RK, Zurbuchen MA, Wang KL
Journal of Crystal Growth, 425, 268, 2015
2 Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
Alaskar Y, Arafin S, Wickramaratne D, Zurbuchen MA, He L, McKay J, Lin QY, Goorsky MS, Lake RK, Wang KL
Advanced Functional Materials, 24(42), 6629, 2014
3 MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5-2.7 mu m
Vizbaras K, Bachmann A, Arafin S, Sailer K, Sprengel S, Boehm G, Meyer R, Amann MC
Journal of Crystal Growth, 323(1), 446, 2011
4 The Ongoing Eruption in Montserrat
Young SR, White R, Wadge G, Voight B, Toothill J, Stevens N, Stewart R, Stasiuk M, Sparks RS, Skerrit G, Shephard J, Scott W, Robertson R, Power J, Norton G, Murphy M, Miller A, Miller CD, Lynch L, Luckett R, Lejeune AM, Latchman J, James M, Jackson P, Hoblitt R, Herd RA, Harford C, Francis PW, Dyer N, Druitt TH, Devine J, Davies M, Darroux B, Cole P, Calder ES, Barclay J, Aspinall W, Arafin S, Ambeh W
Science, 276(5311), 371, 1997