검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Growth and surface analysis of SiO2 on 4H-SiC for MOS devices Kodigala SR, Chattopadhyay S, Overton C, Ardoin I, Gordon BJ, Johnstone D, Roy D, Barone D Applied Surface Science, 330, 465, 2015 |
| 2 |
Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices Kodigala SR, Chattopadhyay S, Overton C, Ardoin I Solid-State Electronics, 114, 104, 2015 |