검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Optimisation and scaling of interfacial GeO2 layers for high-kappa gate stacks on germanium and extraction of dielectric constant of GeO2 Murad SNA, Baine PT, McNeill DW, Mitchell SJN, Armstrong BM, Modreanu M, Hughes G, Chellappan RK Solid-State Electronics, 78, 136, 2012 |
| 2 |
Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers Bera MK, Mahata C, Bhattacharya S, Chakraborty AK, Armstrong BM, Gamble HS, Maiti CK Applied Surface Science, 255(5), 2971, 2008 |
| 3 |
Germanium on sapphire by wafer bonding Baine PT, Gamble HS, Armstrong BM, McNeill DW, Mitchell SJN, Low YH, Rainey PV Solid-State Electronics, 52(12), 1840, 2008 |
| 4 |
Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors Ruddell FH, Suder SL, Bain MF, Montgomery JH, Armstrong BM, Gamble HS, Denvir D, Casse G, Bowcock T, Allport PP, Marczewski J, Kucharski K, Tomaszewski D, Niemiec H, Kucewicz W Solid-State Electronics, 52(12), 1849, 2008 |
| 5 |
Cross-talk suppression in SOI substrates Baine P, Jin M, Gamble HS, Armstrong BM, Linton D, Mohammed F Solid-State Electronics, 49(9), 1461, 2005 |
| 6 |
Determination of band offsets in strained-Si heterolayers Maiti C, Samanta SK, Chatterjee S, Dalapati GK, Bhattacharya S, Armstrong BM, Gamble HS, McCarthy J, Perova TS, Moore RA Thin Solid Films, 462-63, 80, 2004 |
| 7 |
Silicon-on-insulator substrates with buried tungsten silicide layer Gamble HS, Armstrong BM, Baine P, Bain M, McNeill DW Solid-State Electronics, 45(4), 551, 2001 |
| 8 |
Polycrystalline silicon film growth in a SiF4/SiH4/H-2 plasma Lee B, Quinn LJ, Baine PT, Mitchell SJN, Armstrong BM, Gamble HS Thin Solid Films, 337(1-2), 55, 1999 |
| 9 |
Mode of attack of atomic carbon on benzene rings Armstrong BM, Zheng FM, Shevlin PB Journal of the American Chemical Society, 120(24), 6007, 1998 |
| 10 |
The realization of silicon-on-insulator utilizing trench-before-bond and polish stop technology Baine PT, Gay DL, Armstrong BM, Gamble HS Journal of the Electrochemical Society, 145(5), 1738, 1998 |