화학공학소재연구정보센터
검색결과 : 58건
No. Article
1 MBE growth of continuously-graded parabolic quantum well arrays in AlGaAs
Deimert C, Wasilewski ZR
Journal of Crystal Growth, 514, 103, 2019
2 Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides
Gu Y, Zhang YG, Chen XY, Ma YJ, Ji WY, Xi SP, Du B, Shi H, Li AZ
Journal of Crystal Growth, 477, 253, 2017
3 Laterally biased structures for room temperature operation of quantum-well infrared photodetectors
Guzman A, Gargallo-Caballero R, Lu X, Grahn HT
Journal of Crystal Growth, 477, 272, 2017
4 Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE
Torelly G, Jakomin R, Pinto LD, Pires MP, Ruiz J, Caldas PG, Prioli R, Xie H, Ponce FA, Souza PL
Journal of Crystal Growth, 434, 47, 2016
5 Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE
Gocalinska A, Manganaro M, Dimastrodonato V, Pelucchi E
Applied Surface Science, 349, 849, 2015
6 Zn-doping of GaAs nanowires grown by Aerotaxy
Yang FF, Messing ME, Mergenthaler K, Ghasemi M, Johansson J, Wallenberg LR, Pistol ME, Deppert K, Samuelson L, Magnusson MH
Journal of Crystal Growth, 414, 181, 2015
7 Flux growth utilizing the reaction between flux and crucible
Yan JQ
Journal of Crystal Growth, 416, 62, 2015
8 Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 mu m
Gu Y, Zhang YG, Chen XY, Cao YY, Zhou L, Xi SP, Li AZ, Li H
Journal of Crystal Growth, 425, 376, 2015
9 Hydrothermal growth of large piezoelectric single crystals of GaAsO4
Souleiman M, Bhalerao GM, Guillet T, Haidoux A, Cambon M, Levelut C, Haines J, Cambon O
Journal of Crystal Growth, 397, 29, 2014
10 InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 mu m-emitting quantum-cascade-laser active regions
Mawst LJ, Kirch JD, Chang CC, Kim T, Garrod T, Botez D, Ruder S, Kuech TF, Earles T, Tatavarti R, Pan N, Wibowo A
Journal of Crystal Growth, 370, 230, 2013