화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region
Shin YH, Yun I
Solid-State Electronics, 120, 19, 2016
2 Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit
Arshad MKM, Kilchytska V, Emam M, Andrieu F, Flandre D, Raskin JP
Solid-State Electronics, 97, 38, 2014
3 A surface potential based drain current model for asymmetric double gate MOSFETs
Dutta P, Syamal B, Mohankumar N, Sarkar CK
Solid-State Electronics, 56(1), 148, 2011