| 1 |
C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition
Yamamoto Y, Ueno N, Sakuraba M, Murota J, Mai A, Tillack B
Thin Solid Films, 602, 24, 2016 |
| 2 |
Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
Huang JJ, Tsai YJ, Tsai MC, Huang LT, Lee MH, Chen MJ
Applied Surface Science, 324, 662, 2015 |
| 3 |
Arsenic atomic layer doping in Si using AsH3
Yamamoto Y, Kurps R, Murota J, Tillack B
Solid-State Electronics, 110, 29, 2015 |
| 4 |
Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen
Huang JJ, Huang LT, Tsai MC, Lee MH, Chen MJ
Applied Surface Science, 305, 214, 2014 |
| 5 |
Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition
Yamamoto Y, Heinemann B, Murota J, Tillack B
Thin Solid Films, 557, 14, 2014 |
| 6 |
Phosphorus atomic layer doping in Ge using RPCVD
Yamamoto Y, Kurps R, Mai C, Costina I, Murota J, Tillack B
Solid-State Electronics, 83, 25, 2013 |
| 7 |
Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer doping
Chiba Y, Sakuraba M, Tillack B, Murota J
Thin Solid Films, 518, S231, 2010 |
| 8 |
Heavy carbon atomic-layer doping at Si-1 (-) Ge-x(x)/Si heterointerface
Hirano T, Sakuraba M, Tillack B, Murota J
Thin Solid Films, 518, S222, 2010 |
| 9 |
Heavy atomic-layer doping of nitrogen in Si1-xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD
Kawashima T, Sakuraba M, Tillack B, Murota J
Thin Solid Films, 518, S62, 2010 |
| 10 |
Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD
Nosaka T, Sakuraba M, Tillack B, Murota J
Thin Solid Films, 518, S140, 2010 |
