1 |
Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing Deng H, Liu N, Endo K, Yamamura K Applied Surface Science, 434, 40, 2018 |
2 |
Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing Gong H, Pan GS, Zhou Y, Shi XL, Zou CL, Zhang SA Applied Surface Science, 338, 85, 2015 |
3 |
XPS, UV-vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP) Zhou Y, Pan GS, Shi XL, Xu L, Zou CL, Gong H, Luo GH Applied Surface Science, 316, 643, 2014 |
4 |
Preparation and characterization of ultra-flat single crystal surfaces of Pd(1 1 1) and Au(1 1 1) by an in situ interference optical microscopy Wen R, Lahiri A, Alagurajan M, Kuzume A, Kobayashi S, Itaya K Journal of Electroanalytical Chemistry, 649(1-2), 257, 2010 |
5 |
High temperature methanation Sintering and structure sensitivity Rostrup-Nielsen JR, Pedersen K, Sehested J Applied Catalysis A: General, 330, 134, 2007 |
6 |
Fabrication of nano-pits and the measurement of their local surface potentials Yoshitake M, Bose C, Yagyu S Applied Surface Science, 241(1-2), 157, 2005 |
7 |
Improvement of the quality of ZnO substrates by annealing Ko HJ, Han MS, Park YS, Yu YS, Kim BI, Kim SS, Kim JH Journal of Crystal Growth, 269(2-4), 493, 2004 |
8 |
Kink fluctuations at monoatomic step edges on the Si(111) surface Maeda S, Fukuda T, Nakayama H Thin Solid Films, 464-65, 31, 2004 |
9 |
Stochastic motion of 7 x 7 kinks at monoatomic step edges on the Si(111) surface Fukuda T, Maeda S, Nakayama H Applied Surface Science, 216(1-4), 30, 2003 |
10 |
Modeling of a SiO2/Si(001) structure including step and terrace configurations Watanabe T, Ohdomari I Applied Surface Science, 162, 116, 2000 |