검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
UV laser annealing of Diamond-Like Carbon layers obtained by Pulsed Laser Deposition for optical and photovoltaic applications Stock F, Antoni F, Diebold L, Gowda CC, Hajjar-Garreau S, Aubel D, Boubiche N, Le Normand F, Muller D Applied Surface Science, 464, 562, 2019 |
| 2 |
Generating Long Supramolecular Pathways with a Continuous Density of States by Physically Linking Conjugated Molecules via Their End Groups Shokri R, Lacour MA, Jarrosson T, Lere-Porte JP, Serein-Spirau F, Miqueu K, Sotiropoulos JM, Vonau F, Aubel D, Cranney M, Reiter G, Simon L Journal of the American Chemical Society, 135(15), 5693, 2013 |
| 3 |
RepTAGs: Universal tags for isolation and labeling of proteins, for labeling live mammalian cells and for drug discovery Weber W, Link N, Aubel D, Weber CC, Fussenegger M Biotechnology and Bioengineering, 98(6), 1276, 2007 |
| 4 |
Tobacco smoke as inducer for gas phase-controlled transgene expression in mammalian cells and mice Weber W, Spielmann M, El-Baba MD, Keller B, Aubel D, Fussenegger M Biotechnology and Bioengineering, 90(7), 893, 2005 |
| 5 |
Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth Simon L, Louis P, Pirri C, Aubel D, Bischoff JL, Kubler L, Bolmont D Journal of Crystal Growth, 256(1-2), 1, 2003 |
| 6 |
Crystal growth of 3C-SiC polytype on 6H-SiC(0001) substrate Diani M, Simon L, Kubler L, Aubel D, Matko I, Chenevier B, Madar R, Audier M Journal of Crystal Growth, 235(1-4), 95, 2002 |
| 7 |
3C-SiC Growth on 6H-SiC (0001) substrates Matko I, Chenevier B, Audier M, Madar R, Diani M, Simon L, Kubler L, Aubel D Materials Science Forum, 389-3, 315, 2002 |
| 8 |
Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces Stoffel M, Simon L, Bischoff JL, Aubel D, Kubler L, Castelein G Thin Solid Films, 380(1-2), 32, 2000 |
| 9 |
MBE Si regrowth on carbon-induced Si(001)-c(4 x 4) reconstructions studied by RHEED Stoffel M, Simon L, Bischoff JL, Aubel D, Kubler L Thin Solid Films, 380(1-2), 259, 2000 |
| 10 |
Strict Thermal Nitridation Selectivity Between Si and Ge Used as a Chemical Probe of the Outermost Layer of Si1-xGex Alloys and Ge/Si(001) or Si/Ge(001) Heterostructures Aubel D, Diani M, Bischoff JL, Bolmont D, Kubler L Journal of Vacuum Science & Technology B, 12(4), 2699, 1994 |