검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current-voltage measurements Venter A, Murape DM, Botha JR, Auret FD Thin Solid Films, 574, 32, 2015 |
| 2 |
Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes Auret FD, Coelho SMM, Myburg G, van Rensburg PJJ, Meyer WE Thin Solid Films, 518(9), 2485, 2010 |
| 3 |
Investigation of reactive ion etching of dielectrics and Si in CHF3/O-2 or CHF3/Ar for photovoltaic applications Gatzert C, Blakers AW, Deenapanray PNK, Macdonald D, Auret FD Journal of Vacuum Science & Technology A, 24(5), 1857, 2006 |
| 4 |
Analysis of GaN cleaning procedures Diale M, Auret FD, van der Berg NG, Odendaal RQ, Roos WD Applied Surface Science, 246(1-3), 279, 2005 |
| 5 |
Microstructures of electrodeposited CdS layers Nel JM, Gaigher HL, Auret FD Thin Solid Films, 436(2), 186, 2003 |
| 6 |
Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys Mamor M, Auret FD, Goodman SA, Malherbe JB Thin Solid Films, 343-344, 416, 1999 |
| 7 |
Electrical characterization and annealing behavior of defect introduced in Si during sputter etching in an Ar plasma Deenapanray PNK, Auret FD, Myburg G Journal of Vacuum Science & Technology B, 16(4), 1873, 1998 |
| 8 |
Summary of Schottky barrier height data on epitaxially grown n-and p-GaAs Myburg G, Auret FD, Meyer WE, Louw CW, van Staden MJ Thin Solid Films, 325(1-2), 181, 1998 |
| 9 |
Fermi-Level Pinning by Various Metal Schottky Contacts on (100)-OMVPE-Grown N-GaAs Myburg G, Auret FD, Meyer WE, Burger H Thin Solid Films, 249(1), 95, 1994 |