검색결과 : 13건
No. | Article |
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1 |
Effect of beveled mesa angle on the leakage performance of 4H-SiC avalanche photodiodes Chong E, Koh YJ, Lee DH, Bae IH, Kim JS, Jeong YS, Ryu JY, Lee JY, Kang MJ, Park JH, Choi KK Solid-State Electronics, 156, 1, 2019 |
2 |
Experimental and theoretical investigation of millisecond-pulse laser ablation biased Si avalanche photodiodes Wang D, Wei Z, Jin GY, Chen L, Liu HX International Journal of Heat and Mass Transfer, 122, 391, 2018 |
3 |
Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes Lyu YX, Han X, Sun YY, Jiang Z, Guo CY, Xiang W, Dong YN, Cui J, Yao Y, Jiang DW, Wang GW, Xu YQ, Niu ZC Journal of Crystal Growth, 482, 70, 2018 |
4 |
Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process Pitts OJ, Hisko M, Benyon W, Bonneville G, Storey C, SpringThorpe AJ Journal of Crystal Growth, 470, 149, 2017 |
5 |
A SiGe/Si multiple quantum well avalanche photodetector Sun PH, Chang ST, Chen YC, Lin HC Solid-State Electronics, 54(10), 1216, 2010 |
6 |
Using thin-Al films to boost the quantum efficiency of SiGe/Si multi-quantum well avalanche photodiodes Hwang JD, Wang CL Thin Solid Films, 516(10), 3328, 2008 |
7 |
Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes Crouse D, Solomon R Solid-State Electronics, 49(10), 1697, 2005 |
8 |
Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP Huntington AS, Wang CS, Zheng XG, Campbell JC, Coldren LA Journal of Crystal Growth, 267(3-4), 458, 2004 |
9 |
Avalanche multiplication and breakdown in 4H-SiC diodes Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH, Weiner M Materials Science Forum, 457-460, 1069, 2004 |
10 |
Demonstration of 4H-SiC avalanche photodiodes linear array Yan F, Qin C, Zhao JH, Bush M, Olsen G, Ng BK, David JPR, Tozer RC, Weiner M Solid-State Electronics, 47(2), 241, 2003 |