화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy
Averett KL, Hatch JB, Eyink KG, Bowers CT, Mahalingam K
Journal of Crystal Growth, 517, 12, 2019
2 Characterizing the thickness dependence of epitaxial GaN grown over GaN nanocolumns using X-ray diffraction
Shiao WY, Tang TY, Chen YS, Averett KL, Albrecht JD, Yang CC
Journal of Crystal Growth, 310(13), 3159, 2008
3 Epitaxial overgrowth of GaN nanocolumns
Averett KL, Van Nostrand JE, Albrecht JD, Chen YS, Yang CC
Journal of Vacuum Science & Technology B, 25(3), 964, 2007
4 Molecular beam epitaxial growth of high-quality GaN nanocolumns
Van Nostrand JE, Averett KL, Cortez R, Boeckl J, Stutz CE, Sanford NA, Davydov AV, Albrecht JD
Journal of Crystal Growth, 287(2), 500, 2006
5 Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy
Averett KL, Wu X, Koch MW, Wicks GW
Journal of Crystal Growth, 251(1-4), 852, 2003
6 InAs-based bipolar transistors grown by molecular beam epitaxy
Averett KL, Maimon S, Wu X, Koch MW, Wicks GW
Journal of Vacuum Science & Technology B, 20(3), 1213, 2002