화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Physics of heteroepitaxy and heterophases
Masri P, Pezoldt J, Sumiya M, Averous M
Materials Science Forum, 389-3, 379, 2002
2 Optimization of interface and interphase systems: The case of SiC and III-V nitrides
Masri P, Pezoldt J, Sumiya M, Averous M
Materials Science Forum, 389-3, 733, 2002
3 Silicon carbide buffer layers for nitride growth on Si
Masri P, Herro Z, Stauden T, Pezoldt J, Sumiya M, Averous M
Materials Science Forum, 389-3, 1485, 2002
4 (AlN)(x)(SiC)(1-x) buried layers implanted in 6H-SiC: a theoretical study of their optimized composition
Masri P, Laridjani MR, Pezoldt J, Yankov RA, Skorupa W, Averous M
Applied Surface Science, 184(1-4), 383, 2001
5 The influence of foreign atoms on the early stages of SiC growth on (111)Si
Pezoldt J, Masri P, Laridjani MR, Averous M, Wohner T, Schaefer JA, Stauden T, Ecke G, Pieterwas R, Spiess L
Materials Science Forum, 338-3, 289, 2000
6 State of art of c-BN growth physics: Substrate effect
Masri P, Guiot E, Mortet V, Laridjani MR, Averous M
Materials Science Forum, 338-3, 1527, 2000
7 Chemical and electrochemical passivation of PbSe thin layers grown by molecular beam epitaxy
Gautier C, Breton G, Nouaoura M, Cambon M, Charar S, Averous M
Journal of the Electrochemical Society, 145(2), 512, 1998
8 Sulfide films on PbSe thin layer grown by MBE
Gautier C, Breton G, Nouaoura M, Cambon M, Charar S, Averous M
Thin Solid Films, 315(1-2), 118, 1998