| 1 |
Microfiber inclination, crystallinity, and water wettability of microfibrous thin-film substrates of Parylene C in relation to the direction of the monomer vapor during fabrication
Chindam C, Wonderling NM, Lakhtakia A, Awadelkarim OO, Orfali W
Applied Surface Science, 345, 145, 2015 |
| 2 |
Extracting the Schottky barrier height from axial contacts to semiconductor nanowires
Sarpatwari K, Dellas NS, Awadelkarim OO, Mohney SE
Solid-State Electronics, 54(7), 689, 2010 |
| 3 |
Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques
Sarpatwar K, Passmore L, Suliman SA, Awadelkarim OO
Solid-State Electronics, 51(5), 644, 2007 |
| 4 |
Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping
Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT
Thin Solid Films, 504(1-2), 302, 2006 |
| 5 |
Modified three terminal charge pumping technique applied to vertical transistor structures
Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT
Journal of Vacuum Science & Technology B, 23(5), 2189, 2005 |
| 6 |
Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition
Suliman SA, Venkataraman B, Wu CT, Ridley RS, Dolny GM, Awadelkarim OO, Fonash SJ, Ruzyllo J
Solid-State Electronics, 47(5), 899, 2003 |
| 7 |
Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench
Suliman SA, Awadelkarim OO, Fonash SJ, Ridley RS, Dolny GM, Hao J, Knoedler CM
Solid-State Electronics, 46(6), 837, 2002 |
| 8 |
On the capacitance of metal/high-k dielectric material stack/silicon structures
Jiang J, Awadelkarim OO, Lee DO, Roman P, Ruzyllo J
Solid-State Electronics, 46(11), 1991, 2002 |
| 9 |
The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs
Suliman SA, Awadelkarim OO, Fonash SJ, Dolny GM, Hao J, Ridley RS, Knoedler CM
Solid-State Electronics, 45(5), 655, 2001 |
| 10 |
Crystallization of a-Si : H on glass for active layers in thin film transistors - Effects of glass coating
Wang YZ, Fonash SJ, Awadelkarim OO, Gu T
Journal of the Electrochemical Society, 146(1), 299, 1999 |
