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Proposal of new stableABC(2)type ternary semiconductor pnictidesK(3)Cu(3)P(2)andK(3)Ni(3)P(2): First-principles calculations and prospects for thermosphysical and optoelectronic applications Irfan M, Azam S, Iqbal A International Journal of Energy Research, 45(2), 2980, 2021 |
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Radioactivity investigation of water and aerosols in Sharjah, United Arab Emirates Zubair M, Ismail A, Mohammed H, Azam S, Ishag A Energy Sources Part A-recovery Utilization and Environmental Effects, 41(10), 1216, 2019 |
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Effects of particle size, dust concentration and dust-dispersion-air pressure on rock dust inertant requirement for coal dust explosion suppression in underground coal mines Azam S, Mishra DP Process Safety and Environmental Protection, 126, 35, 2019 |
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Experimental investigation on effects of particle size, dust concentration and dust-dispersion-air pressure on minimum ignition temperature and combustion process of coal dust clouds in a G-G furnace Mishra DP, Azam S Fuel, 227, 424, 2018 |
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Theoretical investigation of electronic structure and optical response in relation to the transport properties of Ga1-xInxN (x=0, 0.25, 0.50, 0.75) Shah FA, Khan SA, Arif S, Azam S, Khenata R, Bin Omran S Current Applied Physics, 15(5), 608, 2015 |
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Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba(Si,Al)(5)(O,N)(8) compounds for light-emitting diodes devices Azam S, Khan SA, Minar J, Goumri-Said S Current Applied Physics, 15(10), 1160, 2015 |
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First principle investigation of electronic structure, chemical bonding and optical properties of tetrabarium gallium trinitride oxide single crystal Khan SA, Azam S Materials Research Bulletin, 70, 436, 2015 |
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Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs(2) (A= K, Rb) Azam S, Khan SA, Goumri-Said S Materials Research Bulletin, 70, 847, 2015 |
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Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD Azam S, Svensson C, Wahab Q Solid-State Electronics, 52(5), 740, 2008 |
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Influence of interface state charges on RF performance of LDMOS transistor Kashif A, Johansson T, Svensson C, Azam S, Arnborg T, Wahab Q Solid-State Electronics, 52(7), 1099, 2008 |