검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Ab initio calculations of B diffusion in SiC Rurali R, Hernandez E, Godignon P, Rebollo J, Ordejon P Materials Science Forum, 389-3, 553, 2002 |
| 2 |
Annealing of a vacancy-type defect and diffusion of implanted boron in 6H-SiC Ohshima T, Uedono A, Eryu O, Lee KK, Abe K, Itoh H, Nakashima K Materials Science Forum, 433-4, 633, 2002 |
| 3 |
Comparison of SiGe and SiGe : C heterojunction bipolar transistors Knoll D, Heinemann B, Ehwald KE, Tillack B, Schley P, Osten HJ Thin Solid Films, 369(1-2), 342, 2000 |