화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Ammonothermal growth of GaN on a self-nucleated GaN seed crystal
Bao QX, Saito M, Hazu K, Kagamitani Y, Kurimoto K, Tomida D, Qiao K, Ishiguro T, Yokoyama C, Chichibu SF
Journal of Crystal Growth, 404, 168, 2014
2 Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
Feigelson BN, Anderson TJ, Abraham M, Freitas JA, Hite JK, Eddy CR, Kub FJ
Journal of Crystal Growth, 350(1), 21, 2012
3 Growth and strain characterization of high quality GaN crystal by HVPE
Geng HY, Sunakawa H, Sumi N, Yamamoto K, Yamaguchi AA, Usui A
Journal of Crystal Growth, 350(1), 44, 2012
4 The effect of Si(x)N(y) interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD
Arslan E, Ozturk MK, Ozcelik S, Ozbay E
Current Applied Physics, 9(2), 472, 2009
5 Formation of V-shaped pits in GaN thin films grown on high temperature GaN
Son KS, Kim DG, Cho HK, Lee KH, Kim SW, Park KS
Journal of Crystal Growth, 261(1), 50, 2004