| 1 |
Impact of CO generation during the melting process on carbon concentration in Czochralski silicon
Nagai Y, Tsubota H, Matsumura H
Journal of Crystal Growth, 518, 95, 2019 |
| 2 |
Capillary stability of vapor-liquid-solid crystallization processes and their comparison to Czochralski and Stepanov growth methods
Nebol'sin VA, Suyatin DB, Dunaev AI, Tatarenkov AF
Journal of Crystal Growth, 463, 46, 2017 |
| 3 |
Crystallinity control of SiC grown on Si by sputtering method
Watanabe R, Tsukamoto T, Kamisako K, Suda Y
Journal of Crystal Growth, 463, 67, 2017 |
| 4 |
Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation
Kato M, Arimoto K, Yamanaka J, Nakagawa K, Sawano K
Journal of Crystal Growth, 477, 197, 2017 |
| 5 |
Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl2/Si powder source
Meng EC, Ueki A, Meng X, Suzuki H, Itahara H, Tatsuoka H
Applied Surface Science, 378, 460, 2016 |
| 6 |
Lateral incorporation of vacancies in Czochralski silicon crystals
Kulkarni MS
Journal of Crystal Growth, 310(13), 3183, 2008 |
| 7 |
Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization
Ishihara R, Rana V, He M, Hiroshima Y, Inoue S, Metselaar W, Beenakker K
Solid-State Electronics, 52(3), 353, 2008 |
| 8 |
A model of preferential (100) crystal orientation of Si grains grown by aluminium-induced layer-exchange process
Sarikov A, Schneider J, Muske M, Sieber I, Gall S
Thin Solid Films, 515(19), 7465, 2007 |
| 9 |
Analysis of micro segregation in RF-heated float zone growth of silicon-comparison to the radiation-heated process
Dold P
Journal of Crystal Growth, 261(1), 1, 2004 |
| 10 |
Growth of beta-FeSi2 on MnSi1.7 layers by reactive deposition epitaxy
Kohira M, Souno Y, Matsuyama T, Tatsuoka H, Ohsugi IJ, Nishida IA, Kuwabara H
Applied Surface Science, 216(1-4), 614, 2003 |
