| 1 |
Influence of BEOL process on poly-Si grain boundary traps passivation in 3D NAND flash memory
Zhao YX, Liu J, Hua ZQ, Jin L, Huo ZL
Solid-State Electronics, 156, 28, 2019 |
| 2 |
Utilization of TXRF analytical technique in order to improve front-end semiconductor processing
Budri T
Applied Surface Science, 254(15), 4768, 2008 |
| 3 |
Investigation of reduction in etch rate of isolated holes in SiOCH
Momonoi Y, Yonekura K, Izawa M
Thin Solid Films, 516(11), 3564, 2008 |
| 4 |
Principles and mechanisms of sub-micrometer particle removal by CO2 cryogenic technique
Banerjee S, Campbell A
Journal of Adhesion Science and Technology, 19(9), 739, 2005 |
| 5 |
Comparative studies of physical and chemical properties of plasma-treated CVD low k SiOCH dielectrics
Tsang CF, Su YJ, Bliznetsov VN
Thin Solid Films, 462-63, 269, 2004 |
| 6 |
Enhancing the efficiency of postetch polymer removal using megasonic wet clean for 0.13-mu m dual damascene interconnect process
Chang CK, Foo TH, Murkherjee-Roy M, Bliznetov VN, Li HY
Thin Solid Films, 462-63, 292, 2004 |
