| 1 |
Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect
Hidouri T, Biswas M, Mal I, Nasr S, Chakrabarti S, Samajdar DP, Saidi F
Solar Energy, 199, 183, 2020 |
| 2 |
Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys
Ilahi S, Saidi F, Hamila R, Yacoubi N, Auvray L, Maaref H
Current Applied Physics, 13(3), 610, 2013 |
| 3 |
Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by metalorganic vapour phase epitaxy
Rodriguez P, Auvray L, Favier A, Dazord J, Montell Y
Thin Solid Films, 516(23), 8424, 2008 |
| 4 |
Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
Rodriguez P, Auvray L, Dumont H, Dazord J, Monteil Y
Journal of Crystal Growth, 298, 81, 2007 |
| 5 |
Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs-GaAs - Part II: BGaAs alloy formation
Dumont H, Monteil Y
Journal of Crystal Growth, 290(2), 419, 2006 |
| 6 |
Optimized growth of BGaAs by molecular beam epitaxy
Groenert ME, Averbeck R, Hosler W, Schuster M, Riecherta H
Journal of Crystal Growth, 264(1-3), 123, 2004 |
| 7 |
Growth and characterization of high quality BxGa1-xAs/GaAs(001) epilayers
Dumont H, Dazord J, Monteil Y, Alexandre F, Goldstein L
Journal of Crystal Growth, 248, 463, 2003 |
