| 1 |
A single electron bipolar avalanche transistor implemented in 90 nm CMOS
Webster EAG, Richardson JA, Grant LA, Henderson RK
Solid-State Electronics, 76, 116, 2012 |
| 2 |
71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications
Zhao F
Solid-State Electronics, 53(11), 1169, 2009 |
| 3 |
The effects of radiation-induced interface traps on base current in gated bipolar test structures
Chen XJ, Barnaby HJ
Solid-State Electronics, 52(5), 683, 2008 |
| 4 |
High power(500V-70A) and high gain(44-47) 4H-SiC bipolar junction transistors
Zhang J, Alexandrov P, Zhao JH
Materials Science Forum, 457-460, 1149, 2004 |
| 5 |
A 500V, very high current gain (beta=1517) 4H-SiC bipolar Darlington transistor
Zhang J, Alexandrov P, Zhao JH
Materials Science Forum, 457-460, 1165, 2004 |
| 6 |
A high voltage (1570V) 4H-SiC bipolar Darlington with current gain beta > 640 and tested in a half-bridge inverter up to 20A at V-Bus=900V
Zhao JH, Zhang J, Alexandrov P, Burke T
Materials Science Forum, 457-460, 1169, 2004 |
| 7 |
A high voltage (1,750V) and high current gain (beta=24.8) 4H-SiC bipolar junction transistor using a thin (12 mu m) drift layer
Zhao JH, Zhang J, Alexandrov P, Li X, Burke T
Materials Science Forum, 457-460, 1173, 2004 |
| 8 |
Evaluation of high-speed bipolar transistors for application to chaotic Colpitts oscillator
Bumeliene S, Mykolaitis G, Lasiene G, Cenys A, Tamasevicius A
Materials Science Forum, 384-3, 151, 2002 |
| 9 |
Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs
Ivanov PA, Levinshtein ME, Rumyantsev SL, Ryu SH, Agarwal AK, Palmour JW
Solid-State Electronics, 46(4), 567, 2002 |
| 10 |
Direct calculation of metal-oxide-semiconductor field effect transistor high frequency noise parameters
Chen CH, Deen MJ
Journal of Vacuum Science & Technology A, 16(2), 850, 1998 |
