검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures Llorente CD, Colinge JP, Martinie S, Cristoloveanu S, Wan J, Le Royer C, Ghibaudo G, Vinet M Solid-State Electronics, 159, 26, 2019 |
| 2 |
Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping Joseph HB, Singh SK, Hariharan RM, Priya PA, Kumar NM, Thiruvadigal DJ Applied Surface Science, 449, 823, 2018 |
| 3 |
New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube (TM) integration Llorente CD, Le Royer C, Batude P, Fenouillet-Beranger C, Martinie S, Lu CMV, Allain F, Colinge JP, Cristoloveanu S, Ghibaudo G, Vinet M Solid-State Electronics, 144, 78, 2018 |
| 4 |
Interfacial chemical and electronic structure of cobalt deposition on 2,7-dioctyl[1]benzothieno [3,2-b]benzothiophene (C8-BTBT) Zhu ML, Lyu L, Niu DM, Zhang H, Zhang YH, Liu P, Gao YL Applied Surface Science, 402, 142, 2017 |
| 5 |
Interface electronic structure and morphology of 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) on Au film Wang ST, Niu DM, Lyu L, Huang YB, Wei XH, Wang C, Xie HP, Gao YL Applied Surface Science, 416, 696, 2017 |
| 6 |
Investigation and process optimization of SONOS cell's drain disturb in 2-transistor structure flash arrays Xu ZZ, Qian WS, Chen HL, Xiong W, Hu J, Liu DH, Duan WT, Kong WR, Na W, Zou SC Solid-State Electronics, 129, 44, 2017 |
| 7 |
Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour Jain P, Yadav C, Agarwal A, Chauhan YS Solid-State Electronics, 134, 74, 2017 |
| 8 |
Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism Martino MD, Neves F, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E, Thean A, Claeys C Solid-State Electronics, 112, 51, 2015 |
| 9 |
Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications Gomes UP, Chen YQ, Kabi S, Chow P, Biswas D Current Applied Physics, 13(3), 487, 2013 |
| 10 |
Improved characteristics of Gd2O3 nanocrystal memory with substrate high-low junction Wang JC, Lin CT, Lai CS, Hsu JL, Ai CF Solid-State Electronics, 54(12), 1493, 2010 |