| 1 |
Synthesis of nano-patterned and Nickel Silicide embedded amorphous Si thin layer by ion implantation for higher efficiency solar devices
Bhowmik D, Bhattacharjee S, Lavanyakumar D, Naik V, Satpati B, Karmakar P
Applied Surface Science, 422, 11, 2017 |
| 2 |
Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer
Hu SD, Luo J, Jiang YY, Cheng K, Chen YH, Jin JJ, Wang JA, Zhou JL, Tang F, Zhou XC, Gan P
Solid-State Electronics, 117, 146, 2016 |
| 3 |
High voltage REBULF LDMOS with N+ buried layer
Duan BX, Yang YT, Zhang B
Solid-State Electronics, 54(7), 685, 2010 |
| 4 |
Influence of temperature-pressure treatment on heavily hydrogenated silicon surface
Ciosek J, Ratajczak J
Applied Surface Science, 252(18), 6115, 2006 |
| 5 |
Modeling of Ge Segregation in the Limits of Zero and Infinite Surface-Diffusion
Godbey DJ, Ancona MG
Journal of Vacuum Science & Technology A, 15(3), 976, 1997 |
| 6 |
Suppression of Arsenic Autodoping with Rapid Thermal Epitaxy for Low-Power Bipolar Complementary Metal-Oxide-Semiconductor
King CA, Johnson RW, Chiu TY, Sung JM, Morris MD
Journal of the Electrochemical Society, 142(7), 2430, 1995 |
