화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Oxygen vacancies in SiO2, layers an Si produced at high temperature
Afanas'ev VV, Stesmans A, Revesz AG, Hughes HL
Journal of the Electrochemical Society, 145(9), 3157, 1998
2 The Effects of Fluorine Ion-Implantation on the Formation of Simox Structure
Zhu SY, Lin CL
Thin Solid Films, 298(1-2), 147, 1997
3 Silicon-on-Insulator Obtained by High-Dose Oxygen Implantation, Microstructure, and Formation Mechanism
Stoemenos J, Garcia A, Aspar B, Margail J
Journal of the Electrochemical Society, 142(4), 1248, 1995