검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics Wu TL, Marcon D, Ronchi N, Bakeroot B, You SZ, Stoffels S, Van Hove M, Bisi D, Meneghini M, Groeseneken G, Decoutere S Solid-State Electronics, 103, 127, 2015 |
| 2 |
An EKV-based high voltage MOSFET model with improved mobility and drift model Chauhan YS, Gillon R, Bakeroot B, Krummenacher F, Declercq M, Ionescu AM Solid-State Electronics, 51(11-12), 1581, 2007 |
| 3 |
Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, Desoete B, Frere S, Desormeaux AB, Sharma A, Declercq M, Ionescu AM Solid-State Electronics, 50(11-12), 1801, 2006 |
| 4 |
A new LIGBT structure to suppress substrate currents in a junction isolated technology Bakeroot B, Doutreloigne J, Moens P Solid-State Electronics, 49(3), 363, 2005 |