검색결과 : 5건
No. | Article |
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1 |
SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS Shamiryan D, Baklanov M, Claes M, Boullart W, Paraschiv V Chemical Engineering Communications, 196(12), 1475, 2009 |
2 |
Profile control of novel non-Si gates using BCl3/N-2 plasma Shamiryan D, Paraschiv V, Eslava-Fernandez S, Demand M, Baklanov M, Beckx S, Boullart W Journal of Vacuum Science & Technology B, 25(3), 739, 2007 |
3 |
Bulk properties of MOCVD-deposited HfO2 layers fair high k dielectric applications Van Elshocht S, Baklanov M, Brijs B, Carter R, Caymax M, Carbonell L, Claes M, Conard T, Cosnier V, Date L, De Gendt S, Kluth J, Pique D, Richard O, Vanhaeren D, Vereecke G, Witters T, Zhao C, Heyns M Journal of the Electrochemical Society, 151(10), F228, 2004 |
4 |
Compensation effect during water desorption from siloxane-based spin-on dielectric thin films Proost J, Baklanov M, Maex K, Delaey L Journal of Vacuum Science & Technology B, 18(1), 303, 2000 |
5 |
Analyses of post metal etch cleaning in downstream H2O-based plasma followed by a wet chemistry Li H, Baklanov M, Boullart W, Conard T, Brijs B, Maex K, Froyen L Journal of the Electrochemical Society, 146(10), 3843, 1999 |