화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS
Shamiryan D, Baklanov M, Claes M, Boullart W, Paraschiv V
Chemical Engineering Communications, 196(12), 1475, 2009
2 Profile control of novel non-Si gates using BCl3/N-2 plasma
Shamiryan D, Paraschiv V, Eslava-Fernandez S, Demand M, Baklanov M, Beckx S, Boullart W
Journal of Vacuum Science & Technology B, 25(3), 739, 2007
3 Bulk properties of MOCVD-deposited HfO2 layers fair high k dielectric applications
Van Elshocht S, Baklanov M, Brijs B, Carter R, Caymax M, Carbonell L, Claes M, Conard T, Cosnier V, Date L, De Gendt S, Kluth J, Pique D, Richard O, Vanhaeren D, Vereecke G, Witters T, Zhao C, Heyns M
Journal of the Electrochemical Society, 151(10), F228, 2004
4 Compensation effect during water desorption from siloxane-based spin-on dielectric thin films
Proost J, Baklanov M, Maex K, Delaey L
Journal of Vacuum Science & Technology B, 18(1), 303, 2000
5 Analyses of post metal etch cleaning in downstream H2O-based plasma followed by a wet chemistry
Li H, Baklanov M, Boullart W, Conard T, Brijs B, Maex K, Froyen L
Journal of the Electrochemical Society, 146(10), 3843, 1999