검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
High temperature performance of AlGaN/GaN HEMTs on Si substrates Tan WS, Uren MJ, Fry PW, Houston PA, Balmer RS, Martin T Solid-State Electronics, 50(3), 511, 2006 |
| 2 |
Direct demonstration of the'virtual gate' mechanism for current collapse in AlGaN/GaN HFETs Wells AM, Uren MJ, Balmer RS, Hilton KP, Martin T, Missous M Solid-State Electronics, 49(2), 279, 2005 |
| 3 |
Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry Balmer RS, Martin T Journal of Crystal Growth, 248, 216, 2003 |
| 4 |
Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry Balmer RS, Pickering C, Pidduck AJ, Martin T Journal of Crystal Growth, 245(3-4), 198, 2002 |
| 5 |
In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs Balmer RS, Pickering C, Kier AM, Birbeck JCH, Saker M, Martin T Journal of Crystal Growth, 230(3-4), 361, 2001 |
| 6 |
Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE) Balmer RS, Martin T, Kane MJ, Maclean JO, Whitaker TJ, Ayling SG, Calcott PDJ, Houlton M, Newey JP, O'Mahony SJ Journal of Crystal Growth, 209(2-3), 486, 2000 |