| 1 |
Many-body, Pauli blocking and carrier-impurity interaction effects on the band gap of aluminum doped zinc oxide thin films: A new method to evaluate both hole and electron effective masses of degenerate semiconductors
Esmaeili A
Current Applied Physics, 16(9), 949, 2016 |
| 2 |
Anion-controlled passivation effect of the atomic layer deposited ZnO films by F substitution to O-related defects on the electronic band structure for transparent contact layer of solar cell applications
Choi YJ, Kang KM, Park HH
Solar Energy Materials and Solar Cells, 132, 403, 2015 |
| 3 |
Band gap widening and d(0) ferromagnetism in epitaxial Li-doped Sno(2) films
Wang JC, Zhou W, Wu P
Applied Surface Science, 314, 188, 2014 |
| 4 |
Wide-spectrum Mg and Ga co-doped ZnO-TCO thin films with introduced hydrogen grown by magnetron sputtering at room temperature
Tian CS, Chen XL, Liu JM, Zhang DK, Wei CC, Zhao Y, Zhang XD
Applied Surface Science, 314, 786, 2014 |
| 5 |
Transparent conductive Mg and Ga co-doped ZnO thin films for solar cells grown by magnetron sputtering: H-2 induced changes
Tian CS, Chen XL, Ni J, Liu JM, Zhang DK, Huang Q, Zhao Y, Zhang XD
Solar Energy Materials and Solar Cells, 125, 59, 2014 |
| 6 |
Effect of N-doping on the photocatalytic activity of sol-gel TiO2
Nolan NT, Synnott DW, Seery MK, Hinder SJ, Van Wassenhoven A, Pillai SC
Journal of Hazardous Materials, 211, 88, 2012 |
| 7 |
Band gap widening and narrowing in moderately and heavily doped n-ZnO films
Jain A, Sagar P, Mehra RM
Solid-State Electronics, 50(7-8), 1420, 2006 |
