| 1 |
The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices
Bandic ZZ, Bridger PM, Piquette EC, McGill TC
Solid-State Electronics, 44(2), 221, 2000 |
| 2 |
Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire
Piquette EC, Bridger PM, Bandic ZZ, McGill TC
Journal of Vacuum Science & Technology B, 17(3), 1241, 1999 |
| 3 |
Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain
Bridger PM, Bandic ZZ, Piquette EC, McGill TC
Journal of Vacuum Science & Technology B, 17(4), 1750, 1999 |
| 4 |
Growth and Characterization of Light-Emitting ZnS/GaN Heterostructures
Piquette EC, Bandic ZZ, Mccaldin JO, Mcgill TC
Journal of Vacuum Science & Technology B, 15(4), 1148, 1997 |
| 5 |
Microscopic Processes During Electron-Cyclotron-Resonance Microwave Nitrogen Plasma-Assisted Molecular-Beam Epitaxial-Growth of GaN/GaAs Heterostructures - Experiments and Kinetic Modeling
Bandic ZZ, Mcgill TC, Hauenstein RJ, Osteen ML
Journal of Vacuum Science & Technology B, 14(4), 2948, 1996 |
