1 |
An alternative approach to investigate the origin of p-type conductivity in arsenic doped ZnO Biswas P, Nath P, Sanyal D, Banerji P Current Applied Physics, 15(10), 1256, 2015 |
2 |
A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100) Mukhopadhyay P, Kumar R, Ghosh S, Chakraborty A, Bag A, Kabi S, Banerji P, Biswas D Journal of Crystal Growth, 418, 138, 2015 |
3 |
n- to p- type carrier reversal in nanocrystalline indium doped ZnO thin film gas sensors Pati S, Banerji P, Majumder SB International Journal of Hydrogen Energy, 39(27), 15134, 2014 |
4 |
Thin-Film Transistors with a Graphene Oxide Nanocomposite Channel Jilani SM, Gamot TD, Banerji P Langmuir, 28(48), 16485, 2012 |
5 |
Current transport through InP/InSb heterojunction: Effect of lattice mismatch Sharma R, Paul B, Banerji P Applied Surface Science, 256(7), 2232, 2010 |
6 |
Benzotrifluoromethyl Group-Substituted Poly(para-phenylenevinylene): Effect on Solubility, Optical, and Electronic Properties Chatterjee S, Sen SK, Maji S, Dasgupta B, Banerji P, Banerjee S Journal of Applied Polymer Science, 116(3), 1603, 2010 |
7 |
Enhanced conductivity in iodine doped polyaniline thin film formed by thermal evaporation Adhikari S, Banerji P Thin Solid Films, 518(19), 5421, 2010 |
8 |
Electrical characterization of p-ZnO/p-Si heterojunction Majumdar S, Chattopadhyay S, Banerji P Applied Surface Science, 255(12), 6141, 2009 |
9 |
Optical and electrical properties of as-grown single crystalline PbTe Paul B, Banerji P Journal of Crystal Growth, 311(5), 1260, 2009 |
10 |
Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum Banerji P Applied Surface Science, 253(11), 5129, 2007 |