| 1 |
Corrosion resistance of water repellent aluminum surfaces with various wetting morphologies
Song K, Kim I, Bang S, Jung JY, Nam Y
Applied Surface Science, 467, 1046, 2019 |
| 2 |
ULK1 negatively regulates Wnt signaling by phosphorylating Dishevelled
Hwang SH, Bang S, Kang KS, Kang D, Chung J
Biochemical and Biophysical Research Communications, 508(1), 308, 2019 |
| 3 |
Optogenetic neuronal stimulation promotes axon outgrowth and myelination of motor neurons in a three-dimensional motor neuron-Schwann cell coculture model on a microfluidic biochip
Hyung S, Lee SR, Kim YJ, Bang S, Tahk D, Park JC, Suh JKF, Jeon NL
Biotechnology and Bioengineering, 116(10), 2425, 2019 |
| 4 |
Thixotropic gel electrolyte containing poly(ethylene glycol) with high zinc ion concentration for the secondary aqueous Zn/LiMn2O4 battery
Mitha A, Mi HY, Dong WH, Cho IS, Ly J, Yoo S, Bang S, Hoang TKA, Chen P
Journal of Electroanalytical Chemistry, 836, 1, 2019 |
| 5 |
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation
Lee DK, Kim MH, Kim TH, Bang S, Choi YJ, Kim S, Cho S, Park BG
Solid-State Electronics, 154, 31, 2019 |
| 6 |
Effect of acidity on Ni catalysts supported on P-modified Al2O3 for dry reforming of methane
Bang S, Hong E, Baek SW, Shin CH
Catalysis Today, 303, 100, 2018 |
| 7 |
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p(+)-Si memory device
Kim TH, Kim S, Kim H, Kim MH, Bang S, Cho S, Park BG
Solid-State Electronics, 140, 51, 2018 |
| 8 |
Gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si RRAM for synaptic device application
Bang S, Kim MH, Kim TH, Lee DK, Kim S, Cho S, Park BG
Solid-State Electronics, 150, 60, 2018 |
| 9 |
Reductive amination of isopropanol to monoisopropylamine over Ni-Fe/gamma-Al2O3 catalysts: Synergetic effect of Ni-Fe alloy formation
Hong E, Bang S, Cho JH, Jung KD, Shin CH
Applied Catalysis A: General, 542, 146, 2017 |
| 10 |
Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory
Kim MH, Kim S, Bang S, Kim TH, Lee DK, Cho S, Lee JH, Park BG
Solid-State Electronics, 132, 109, 2017 |
