검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
The role of hydrogen in carbon incorporation and surface roughness of MOCVD-grown thin boron nitride Caban PA, Teklinska D, Michalowski PP, Gaca J, Wojcik M, Grzonka J, Ciepielewski P, Mozdzonek M, Baranowski JM Journal of Crystal Growth, 498, 71, 2018 |
| 2 |
Growth of low-density GaN quantum dots on AlxGa1-xN Pakula K, Bozek R, Surowiecka K, Stepniewski R, Wysmolek A, Baranowski JM Journal of Crystal Growth, 289(2), 472, 2006 |
| 3 |
Long-range order spontaneous superlattice in AlGaN epilayers Pakula K, Borysiuk J, Bozek R, Baranowski JM Journal of Crystal Growth, 296(2), 191, 2006 |
| 4 |
Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment Pakula K, Bozek R, Baranowski JM, Jasinski J, Liliental-Weber Z Journal of Crystal Growth, 267(1-2), 1, 2004 |
| 5 |
Photoluminescence of GaN layers studied with two-color spectroscopy Wojak M, Klik MAJ, Forcales M, Gregorkiewicz T, Wells JPR, Pakula K, Baranowski JM, Porowski S Solid-State Electronics, 47(3), 579, 2003 |
| 6 |
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer Godlewski M, Goldys EM, Phillips MR, Pakula K, Baranowski JM Applied Surface Science, 177(1-2), 22, 2001 |