검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Suppression of Overpressure During a Vapor Cloud Explosion A New Approach Baron N, Buchwald CR Process Safety Progress, 36(1), 54, 2017 |
| 2 |
So you want to change the world? Baron N Nature, 540(7634), 517, 2016 |
| 3 |
In the cross hairs of controversy Baron N Nature, 528(7582), 332, 2015 |
| 4 |
Growth of GaN based structures on Si(110) by molecular beam epitaxy Cordier Y, Moreno JC, Baron N, Frayssinet E, Chauveau JM, Nemoz M, Chenot S, Damilano B, Semond F Journal of Crystal Growth, 312(19), 2683, 2010 |
| 5 |
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Cordier Y, Baron N, Chenot S, Vennegues P, Tottereau O, Leroux M, Semond F, Massies J Journal of Crystal Growth, 311(7), 2002, 2009 |
| 6 |
Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Cordier Y, Azize M, Baron N, Bougrioua Z, Chenot S, Tottereau O, Massies J, Gibart P Journal of Crystal Growth, 310(5), 948, 2008 |
| 7 |
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Cordier Y, Baron N, Semond F, Massies J, Binetti M, Henninger B, Besendahl M, Zettler T Journal of Crystal Growth, 301, 71, 2007 |
| 8 |
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Cordier Y, Azize M, Baron N, Chenot S, Tottereau O, Massies J Journal of Crystal Growth, 309(1), 1, 2007 |