검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Besleaga C, Stan GE, Pintilie I, Barquinha P, Fortunato E, Martins R Applied Surface Science, 379, 270, 2016 |
| 2 |
A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors Moldovan O, Castro-Carranza A, Cerdeira A, Estrada M, Barquinha P, Martins R, Fortunato E, Miljakovic S, Iniguez B Solid-State Electronics, 126, 81, 2016 |
| 3 |
Charging effects and surface potential variations of Cu-based nanowires Nunes D, Calmeiro TR, Nandy S, Pinto JV, Pimentel A, Barquinha P, Carvalho PA, Walmsley JC, Fortunato E, Martins R Thin Solid Films, 601, 45, 2016 |
| 4 |
a-GIZO TFT neural modeling, circuit simulation and validation Bahubalindruni PG, Tavares VG, Barquinha P, Duarte C, Cardoso N, de Oliveira PG, Martins R, Fortunato E Solid-State Electronics, 105, 30, 2015 |
| 5 |
Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances Fortunato E, Barquinha P, Martins R Advanced Materials, 24(22), 2945, 2012 |
| 6 |
Complementary Metal Oxide Semiconductor Technology With and On Paper Martins R, Nathan A, Barros R, Pereira L, Barquinha P, Correia N, Costa R, Ahnood A, Ferreira I, Fortunato E Advanced Materials, 23(39), 4491, 2011 |
| 7 |
Solid-state paper batteries for controlling paper transistors Ferreira I, Bras B, Martins JI, Correia N, Barquinha P, Fortunato E, Martins R Electrochimica Acta, 56(3), 1099, 2011 |
| 8 |
Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors Olziersky A, Barquinha P, Vila A, Magana C, Fortunato E, Morante JR, Martins R Materials Chemistry and Physics, 131(1-2), 512, 2011 |
| 9 |
High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs Goncalves G, Barquinha P, Pereira L, Franco N, Alves E, Martins R, Fortunato E Electrochemical and Solid State Letters, 13(1), II20, 2010 |
| 10 |
Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics Pei ZL, Pereira L, Goncalves G, Barquinha P, Franco N, Alves E, Rego AMB, Martins R, Fortunato E Electrochemical and Solid State Letters, 12(10), G65, 2009 |