검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements Esfeh BK, Kilchytska V, Barral V, Planes N, Haond M, Flandre D, Raskin JP Solid-State Electronics, 117, 130, 2016 |
| 2 |
Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications Makovejev S, Esfeh BK, Barral V, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V Solid-State Electronics, 108, 47, 2015 |
| 3 |
Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors Barral V, Poiroux T, Vinet M, Widiez J, Previtali B, Grosgeorges P, Le Carval G, Barraud S, Autran JL, Munteanu D, Deleonibus S Solid-State Electronics, 51(4), 537, 2007 |