| 1 |
Double Gaussian distribution of barrier height for FeCrNiC alloy Schottky contacts on p-Si substrates
Bestas AN, Yazici S, Aktas F, Abay B
Applied Surface Science, 318, 280, 2014 |
| 2 |
Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature
Reddy MSP, Kumar AA, Reddy VR
Thin Solid Films, 519(11), 3844, 2011 |
| 3 |
Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes
Dogan H, Korkut H, Yildirim N, Turut A
Applied Surface Science, 253(18), 7467, 2007 |
| 4 |
Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes
Ozer M, Yildiz DE, Altindal S, Bulbul MM
Solid-State Electronics, 51(6), 941, 2007 |
| 5 |
Investigation on the barrier height and inhomogeneity of nickel silicide Schottky
Huang SH, Lu F
Applied Surface Science, 252(12), 4027, 2006 |
| 6 |
Analysis of current-voltage characteristics of inhomogeneous Schottky diodes at low temperatures
Chand S, Bala S
Applied Surface Science, 252(2), 358, 2005 |
| 7 |
Modeling of the influence of Schottky barrier inhomogeneities on SiC diode characteristics
Weiss R, Frey L, Ryssel H
Materials Science Forum, 457-460, 973, 2004 |
