| 1 |
Interfacial Properties of Atomic Layer Deposited Al2O3/AlN Bilayer on GaN
Kim HY, Kim DH, Choi BJ
Korean Journal of Materials Research, 28(5), 268, 2018 |
| 2 |
Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes
Akkaya A, Karaaslan T, Dede M, Cetin H, Ayyildiz E
Thin Solid Films, 564, 367, 2014 |
| 3 |
Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes
Kumar A, Vinayak S, Singh R
Current Applied Physics, 13(6), 1137, 2013 |
| 4 |
Electrical and structural properties of a stacked metal layer contact to n-InP
Huang WC, Horng CT
Applied Surface Science, 257(8), 3565, 2011 |
| 5 |
Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range
Vural O, Safak Y, Altindal S, Turut A
Current Applied Physics, 10(3), 761, 2010 |
| 6 |
Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range
Demirezen S, Altindal S
Current Applied Physics, 10(4), 1188, 2010 |
| 7 |
Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
Asubay S, Gullu O, Turut A
Applied Surface Science, 254(11), 3558, 2008 |
| 8 |
Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(: Sn)
Duman S, Gurbulak B, Turut A
Applied Surface Science, 253(8), 3899, 2007 |
| 9 |
Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature
Gullu O, Biber M, Duman S, Turut A
Applied Surface Science, 253(17), 7246, 2007 |
| 10 |
Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode
Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Maiti CK
Applied Surface Science, 252(11), 3933, 2006 |
