검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Properties and suitability of 4H-SIC epitaxial layers grown at different CVD systems for hijh voltage applications Thomas B, Bartsch W, Stein R, Schorner R, Stephani D Materials Science Forum, 457-460, 181, 2004 |
| 2 |
To be "snappy" or not - a comparison of the transient behaviours of bipolar SiC-diodes Bartsch W, Schorner R, Mitlehner H, Dohnke KO, Thomas B, Stephani D Materials Science Forum, 433-4, 895, 2002 |
| 3 |
Temperature dependence of forward and reverse characteristics of Ti, W, Ta and Ni Schottky diodes on 4H-SiC Treu M, Rupp R, Kapels H, Bartsch W Materials Science Forum, 353-356, 679, 2001 |
| 4 |
Performance and reliability issues of SiC-Schottky diodes Rupp R, Treu M, Mauder A, Griebl E, Werner W, Bartsch W, Stephani D Materials Science Forum, 338-3, 1167, 2000 |
| 5 |
Static and dynamic characteristics of 4H-SiC JFETs designed for different blocking categories Friedrichs P, Mitlehner H, Kaltschmidt R, Weinert U, Bartsch W, Hecht C, Dohnke KO, Weis B, Stephani D Materials Science Forum, 338-3, 1243, 2000 |