| 1 |
Ellipsometric investigation of nucleation sites for chemical vapor deposition of Si on SiO2 and Si3N4 surfaces
Basa C, Irene EA
Journal of Vacuum Science & Technology A, 17(3), 817, 1999 |
| 2 |
Atomic force microscopy and ellipsometry study of the nucleation and growth mechanism of polycrystalline silicon films on silicon dioxide
Basa C, Tinani M, Irene EA
Journal of Vacuum Science & Technology A, 16(4), 2466, 1998 |
| 3 |
Effects of ion pretreatments on the nucleation of silicon on silicon dioxide
Basa C, Hu YZ, Tinani M, Irene EA
Journal of Vacuum Science & Technology A, 16(6), 3223, 1998 |
| 4 |
In situ ellipsometry for monitoring nucleation and growth of silicon on silicon dioxide
Basa C, Hu YZ, Irene EA
Thin Solid Films, 313-314, 424, 1998 |
| 5 |
High Selectivity Magnetically Enhanced Reactive Ion Etching of Boron-Nitride Films
Cote D, Nguyen S, Dobuzinsky D, Basa C, Neureither B
Journal of the Electrochemical Society, 141(12), 3456, 1994 |
| 6 |
Boron-Nitride and Silicon Boron-Nitride Film and Polish Characterization
Neureither B, Basa C, Sandwick T, Blumenstock K
Journal of the Electrochemical Society, 140(12), 3607, 1993 |
